Technical Staff - Quantum Information and Integrated Nanosystems Group
Group 89 Quantum Information and Integrated Nanosystems Group
The Quantum Information and Integrated Nanosystems Group conducts quantum information science research from a shared foundation of innovative control-signal design, outstanding fabrication tools, and well-equipped measurement infrastructure. The group has a broad range of experimental and prototyping activities. The group's quantum information science activities include the development of superconducting and trapped-ion qubits and quantum sensing with nitrogen-vacancy (NV) centers in diamond. In addition, the group has robust capabilities in classical superconducting circuits, complementary metal-oxide semiconductor (CMOS) design and fabrication, and integrated photonics. These component technologies are used in synergy with quantum information science demonstrations, as well as in standalone applications that include beyond-CMOS circuit technologies, energy-starved sensors, compact optical communication and laser radar transceivers, and microwave photonic signal processing.
Job Description
The group is seeking a CMOS device development engineer to develop specialized silicon CMOS and beyond-CMOS technologies. This individual will be expected to contribute both subject matter expertise and technical leadership, and will work with a team of process engineers to establish future generations of Lincoln Laboratory special-purpose device technologies. The successful candidate will have a thorough understanding of the CMOS process flow, and demonstrated depth of knowledge and experience with semiconductor device physics, TCAD modeling and semiconductor device design. CMOS background should include familiarity with technology nodes at or below 65 nm, and preferably also including nanometer-scale technologies. He or she should have a demonstrated ability to plan rigorous TCAD and physical experiments, and to respond to rapidly-shifting priorities. Effective communication with technical staff and technicians within and outside their field of specialty is required.
Requirements:
Ph.D. in Electrical Engineering, Materials Science, Chemical Engineering, Physics or related field or a M.S. with at least 5 years hands-on experience in semiconductor device and/or process development. Familiarity with CMOS technology at or below the 65-nm node as well as beyond-CMOS technologies is essential. Experience with CMOS device development for production use is preferred. Must have excellent written and verbal communication skills. Experience should include statistical design of experiments, transistor design, TCAD, and analysis of test data. The successful candidate will have an awareness of the relevant state of the art device technologies in terms of silicon processing steps, process integration, scaling principles and drivers of technology design rules and performance targets
For Benefits Information, click http://hrweb.mit.edu/benefits
Selected candidate will be subject to a pre-employment background investigation and must be able to obtain and maintain a Secret level DoD security clearance.
MIT Lincoln Laboratory is an Equal Employment Opportunity (EEO) employer. All qualified applicants will receive consideration for employment and will not be discriminated against on the basis of race, color, religion, sex, sexual orientation, gender identity, national origin, age, veteran status, disability status, or genetic information; U.S. citizenship is required.
Requisition ID: 32578
Estimated Salary: $20 to $28 per hour based on qualifications.
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